VUO28-12NO7 3~ rectifier bridge standard rectifier module k n d h a part number VUO28-12NO7 features / advantages: applications: package: package with dcb ceramic improved temperature and power cycling planar passivated chips very low forward voltage drop very low leakage current diode for main rectification for three phase bridge configurations supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors eco-pac1 industry standard outline rohs compliant soldering pins for pcb mounting height: 9 mm base plate: dcb ceramic reduced weight advanced power cycling rrm 1200 i30 fsm 120 dav v = v a a = = i 3~ rectifier ixys reserves the right to change limits, conditions and dimensions. 20130322a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VUO28-12NO7 v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.20 r 2.5 k/w r min. 30 v rsm v 10 t = 25c vj t = c vj ma 0.7 v = v r t = 25c vj i = a f v t = c c 105 p tot 50 w t = 25c c r k/w 0.4 10 1200 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.61 t = 25c vj 150 v f0 v 0.84 t = c vj 150 r f 28.8 m ? v 1.14 t = c vj i = a f v 10 1.68 i = a f 30 i = a f 30 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 1200 max. repetitive reverse blocking voltage t = 25c vj c j 4 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 120 130 50 50 a a a a 100 110 72 70 1200 dav d = rectangular ? bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1300 ixys reserves the right to change limits, conditions and dimensions. 20130322a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VUO28-12NO7 ratings xxx xx-xxxxx yycw lot# made in germany circuit diagram part number date code logo package t vj c m d nm 2 mounting torque 1.5 t stg c 125 storage temperature -40 weight g 19 symbol definition typ. max. min. conditions virtual junction temperature unit v v t = 1 second v t = 1 minute isolation voltage mm mm 6.0 10.0 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 100 a per terminal 150 -40 terminal to terminal eco-pac1 delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol VUO28-12NO7 479632 box 25 VUO28-12NO7 standard 2500 3000 isol threshold voltage v 0.84 m ? v 0 max r 0 max slope resistance * 27.6 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130322a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VUO28-12NO7 k n d h a outlines eco-pac1 ixys reserves the right to change limits, conditions and dimensions. 20130322a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VUO28-12NO7 0 1 1 10 100 v f [v] i f [a] 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 10 -3 10 -2 10 -1 10 0 40 60 80 100 1 10 100 1000 10000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175 051015 0 10 20 30 0 25 50 75 100 125 150 0 10 20 30 40 i fsm [a] t[s] t[ms] i 2 t [a 2 s] p tot [w] i davm [a] t a [c] i f(av)m [a] t c [c] z thjc [k/w] t[ms] constants for z thjc calculation: ir th (k/w) t i (s) 1 1.359 0.1015 20.3286 0.1026 30.1651 0.4919 40.6473 0.62 0.8 x v rrm 50 hz t vj =45c t vj =45c v r = 0 v r thja : 0.6 kw 0.8 kw 1kw 2kw 4kw 8kw dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 125c 150c t vj =25c t vj =150c t vj =150c fig. 1 forward current vs. voltage drop per diode fig. 2 surge overload current vs. time per diode fig. 3 i 2 t vs. time per diode fig. 4 power dissipation vs. forward current and ambient temperature per diode fig. 5 max. forward current vs. case temperature per diode fi g . 6 transient thermal im p edance j unction to case vs. time p er diode rectifier ixys reserves the right to change limits, conditions and dimensions. 20130322a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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